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Totem pole output advantages1/2/2023 gate-source voltage curves are similar to silicon MOSFETs. In addition, on-resistance and breakdown voltage of a GaN device have a similar meaning as their silicon counterparts. GaN transistors borrowed the same nomenclature as their silicon brethren: gate, drain and source, as shown Fig. Although GaN is young in its life cycle, it will certainly see significant improvements in the years to come. The new material is gallium nitride (GaN) a high electron mobility (HEMT) semiconductor, whaich is poised to usher in new power devices that are superior to the present state of the art. The power electronics industry reached the theoretical limit of silicon MOSFETs and now must go to another semiconductor material whose perfromance matches today’s newer systems. However, silicon power MOSFETs have not kept pace with evolutionary changes in the power electronics systems industry. Broader silicon usage stemmed from its improved physical properties combined with a large investment in manufacturing infrastructure and engineering. The power semiconductor evolution started with germanium and selenium devices that succumbed to silicon types around the 1950s.
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